Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy

نویسندگان

  • K. M. Chen
  • H. J. Huang
  • C. Y. Chang
  • L. P. Chen
  • G. W. Huang
چکیده

Articles you may be interested in Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition Appl. n-Si /i-p-i SiGe /n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy Study of thin film deposition processes employing variable kinetic energy, highly collimated neutral molecular beams J.

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تاریخ انتشار 2014